Vertically Emitting Devices

We developed a platform for reconfigurable vertical light-emitting diodes (LEDs) based on atomically thin 2D semiconductors, specifically monolayer WSe₂. These devices utilize a split-gate architecture that allows for precise electrostatic tuning between transistor, p-n diode, and n-p diode functionalities. To enhance light-matter interaction, we integrated these emitters with high-Q Distributed Bragg Reflector (DBR) systems. While our initial objective was to achieve lasing, we observed even more curious behavior: the emergence of a strong light-matter coupling regime.

By embedding the 2D LED within a microcavity, we demonstrated room-temperature electrical control over the polarization and emission angle of the pulsed electroluminescence. The device architecture enables us to manipulate the excitonic properties and cavity modes simultaneously, establishing a scalable building block for future transparent, flexible, and quantum optoelectronic circuits.

Project Technical Profile

Core Skills: Cleanroom Microfabrication (E-beam lithography, dry etching), Numerical simulations, van der Waals Heterostructure Assembly, High-Q Cavity Design, Free-space optics and Ultrafast Laser Spectroscopy.
Key Achievement: Realized the first room-temperature electrical control of emission angle and polarization in a cavity-integrated 2D pulsed LED.